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FGA40N65SMD

FGA40N65SMD

For Reference Only

Part Number FGA40N65SMD
PNEDA Part # FGA40N65SMD
Description IGBT 650V 80A 349W TO3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,800
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGA40N65SMD Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGA40N65SMD
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
FGA40N65SMD, FGA40N65SMD Datasheet (Total Pages: 11, Size: 1,280.66 KB)
PDFFGA40N65SMD Datasheet Cover
FGA40N65SMD Datasheet Page 2 FGA40N65SMD Datasheet Page 3 FGA40N65SMD Datasheet Page 4 FGA40N65SMD Datasheet Page 5 FGA40N65SMD Datasheet Page 6 FGA40N65SMD Datasheet Page 7 FGA40N65SMD Datasheet Page 8 FGA40N65SMD Datasheet Page 9 FGA40N65SMD Datasheet Page 10 FGA40N65SMD Datasheet Page 11

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FGA40N65SMD Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeField Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 40A
Power - Max349W
Switching Energy820µJ (on), 260µJ (off)
Input TypeStandard
Gate Charge119nC
Td (on/off) @ 25°C12ns/92ns
Test Condition400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr)42ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3PN

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

480A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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STMicroelectronics

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

35A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

165µJ (on), 255µJ (off)

Input Type

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Gate Charge

55nC

Td (on/off) @ 25°C

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Test Condition

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Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

Manufacturer

IXYS

Series

XPT™, GenX3™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

410A

Current - Collector Pulsed (Icm)

1100A

Vce(on) (Max) @ Vge, Ic

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Power - Max

1560W

Switching Energy

5mJ (on), 4mJ (off)

Input Type

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Gate Charge

340nC

Td (on/off) @ 25°C

60ns/370ns

Test Condition

400V, 100A, 0Ohm, 15V

Reverse Recovery Time (trr)

108ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PLUS247™-3

STGB3NB60SDT4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

6A

Current - Collector Pulsed (Icm)

25A

Vce(on) (Max) @ Vge, Ic

1.5V @ 15V, 3A

Power - Max

70W

Switching Energy

1.15mJ (off)

Input Type

Standard

Gate Charge

18nC

Td (on/off) @ 25°C

125ns/3.4µs

Test Condition

480V, 3A, 1kOhm, 15V

Reverse Recovery Time (trr)

1.7µs

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

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