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FGY100T65SCDT

FGY100T65SCDT

For Reference Only

Part Number FGY100T65SCDT
PNEDA Part # FGY100T65SCDT
Description FS3TIGBT TO247 100A 650V
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,700
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGY100T65SCDT Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGY100T65SCDT
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
FGY100T65SCDT, FGY100T65SCDT Datasheet (Total Pages: 8, Size: 310.54 KB)
PDFFGY100T65SCDT Datasheet Cover
FGY100T65SCDT Datasheet Page 2 FGY100T65SCDT Datasheet Page 3 FGY100T65SCDT Datasheet Page 4 FGY100T65SCDT Datasheet Page 5 FGY100T65SCDT Datasheet Page 6 FGY100T65SCDT Datasheet Page 7 FGY100T65SCDT Datasheet Page 8

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FGY100T65SCDT Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)200A
Current - Collector Pulsed (Icm)300A
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 100A
Power - Max750W
Switching Energy5.4mJ (on), 3.8mJ (off)
Input TypeStandard
Gate Charge157nC
Td (on/off) @ 25°C84ns/216ns
Test Condition400V, 100A, 4.7Ohm, 15V
Reverse Recovery Time (trr)62ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

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Package / Case

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

190nC

Td (on/off) @ 25°C

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Test Condition

400V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

370µJ (on), 2.1mJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

480V, 39A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

TrenchStop®

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

1.37mJ

Input Type

Standard

Gate Charge

53nC

Td (on/off) @ 25°C

40ns/450ns

Test Condition

600V, 8A, 81Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3

APT54GA60BD30

Microsemi

Manufacturer

Microsemi Corporation

Series

-

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

96A

Current - Collector Pulsed (Icm)

161A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 32A

Power - Max

416W

Switching Energy

534µJ (on), 466µJ (off)

Input Type

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Gate Charge

28nC

Td (on/off) @ 25°C

17ns/112ns

Test Condition

400V, 32A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 [B]

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