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FGY75T95LQDT

FGY75T95LQDT

For Reference Only

Part Number FGY75T95LQDT
PNEDA Part # FGY75T95LQDT
Description IGBT 950V 75A
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,034
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGY75T95LQDT Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGY75T95LQDT
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
FGY75T95LQDT, FGY75T95LQDT Datasheet (Total Pages: 10, Size: 658.25 KB)
PDFFGY75T95LQDT Datasheet Cover
FGY75T95LQDT Datasheet Page 2 FGY75T95LQDT Datasheet Page 3 FGY75T95LQDT Datasheet Page 4 FGY75T95LQDT Datasheet Page 5 FGY75T95LQDT Datasheet Page 6 FGY75T95LQDT Datasheet Page 7 FGY75T95LQDT Datasheet Page 8 FGY75T95LQDT Datasheet Page 9 FGY75T95LQDT Datasheet Page 10

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FGY75T95LQDT Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)950V
Current - Collector (Ic) (Max)150A
Current - Collector Pulsed (Icm)225A
Vce(on) (Max) @ Vge, Ic1.69V @ 15V, 75A
Power - Max453W
Switching Energy2mJ (on), 1.8mJ (off)
Input TypeStandard
Gate Charge663.3nC
Td (on/off) @ 25°C52ns/496ns
Test Condition600V, 37.5A, 4.7Ohm, 15V
Reverse Recovery Time (trr)259ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Supplier Device PackageTO-247-3

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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