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FJN3305RTA

FJN3305RTA

For Reference Only

Part Number FJN3305RTA
PNEDA Part # FJN3305RTA
Description TRANS PREBIAS NPN 300MW TO92-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 32,298
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FJN3305RTA Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFJN3305RTA
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
FJN3305RTA, FJN3305RTA Datasheet (Total Pages: 7, Size: 320.31 KB)
PDFFJN3305RTA Datasheet Cover
FJN3305RTA Datasheet Page 2 FJN3305RTA Datasheet Page 3 FJN3305RTA Datasheet Page 4 FJN3305RTA Datasheet Page 5 FJN3305RTA Datasheet Page 6 FJN3305RTA Datasheet Page 7

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FJN3305RTA Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max300mW
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device PackageTO-92-3

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Package / Case

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Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 5mA

Current - Collector Cutoff (Max)

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Frequency - Transition

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Panasonic Electronic Components

Manufacturer

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Series

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Transistor Type

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Manufacturer

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Series

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PNP - Pre-Biased

Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Supplier Device Package

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NXP USA Inc.

Series

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Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10 kOhms

Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Mounting Type

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Package / Case

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