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FJV3112RMTF

FJV3112RMTF

For Reference Only

Part Number FJV3112RMTF
PNEDA Part # FJV3112RMTF
Description TRANS PREBIAS NPN 200MW SOT23-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,814
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FJV3112RMTF Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFJV3112RMTF
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
FJV3112RMTF, FJV3112RMTF Datasheet (Total Pages: 3, Size: 46.13 KB)
PDFFJV3112RMTF Datasheet Cover
FJV3112RMTF Datasheet Page 2 FJV3112RMTF Datasheet Page 3

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FJV3112RMTF Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)40V
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max200mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)

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