FM24VN10-GTR
For Reference Only
| Part Number | FM24VN10-GTR |
| PNEDA Part # | FM24VN10-GTR |
| Description | IC FRAM 1M I2C 3.4MHZ 8SOIC |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,930 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 2 - May 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FM24VN10-GTR Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FM24VN10-GTR |
| Category | Semiconductors › Memory ICs › Memory |
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Logistics Mode
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FM24VN10-GTR Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | F-RAM™ |
| Memory Type | Non-Volatile |
| Memory Format | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Size | 1Mb (128K x 8) |
| Memory Interface | I²C |
| Clock Frequency | 3.4MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 130ns |
| Voltage - Supply | 2V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
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Manufacturer Microchip Technology Series - Memory Type Non-Volatile Memory Format EEPROM Technology EEPROM Memory Size 1Kb (128 x 8) Memory Interface I²C Clock Frequency 400kHz Write Cycle Time - Word, Page 5ms Access Time 900ns Voltage - Supply 1.8V ~ 5.5V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |
Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Dual Port, Asynchronous Memory Size 256Kb (16K x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 15ns Access Time 15ns Voltage - Supply 4.5V ~ 5.5V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x14) |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 36Mb (2M x 18) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page - Access Time 3.5ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
