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FQA11N90C-F109

FQA11N90C-F109

For Reference Only

Part Number FQA11N90C-F109
PNEDA Part # FQA11N90C-F109
Description MOSFET N-CH 900V 11A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,560
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQA11N90C-F109 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQA11N90C-F109
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQA11N90C-F109, FQA11N90C-F109 Datasheet (Total Pages: 8, Size: 1,545.59 KB)
PDFFQA11N90C-F109 Datasheet Cover
FQA11N90C-F109 Datasheet Page 2 FQA11N90C-F109 Datasheet Page 3 FQA11N90C-F109 Datasheet Page 4 FQA11N90C-F109 Datasheet Page 5 FQA11N90C-F109 Datasheet Page 6 FQA11N90C-F109 Datasheet Page 7 FQA11N90C-F109 Datasheet Page 8

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FQA11N90C-F109 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.1Ohm @ 5.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3290pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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