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FQA13N80-F109

FQA13N80-F109

For Reference Only

Part Number FQA13N80-F109
PNEDA Part # FQA13N80-F109
Description MOSFET N-CH 800V 12.6A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,328
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQA13N80-F109 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQA13N80-F109
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQA13N80-F109, FQA13N80-F109 Datasheet (Total Pages: 8, Size: 1,812.47 KB)
PDFFQA13N80-F109 Datasheet Cover
FQA13N80-F109 Datasheet Page 2 FQA13N80-F109 Datasheet Page 3 FQA13N80-F109 Datasheet Page 4 FQA13N80-F109 Datasheet Page 5 FQA13N80-F109 Datasheet Page 6 FQA13N80-F109 Datasheet Page 7 FQA13N80-F109 Datasheet Page 8

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FQA13N80-F109 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs750mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs88nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3500pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

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