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FQA33N10

FQA33N10

For Reference Only

Part Number FQA33N10
PNEDA Part # FQA33N10
Description MOSFET N-CH 100V 36A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,376
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQA33N10 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQA33N10
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQA33N10, FQA33N10 Datasheet (Total Pages: 8, Size: 566.61 KB)
PDFFQA33N10 Datasheet Cover
FQA33N10 Datasheet Page 2 FQA33N10 Datasheet Page 3 FQA33N10 Datasheet Page 4 FQA33N10 Datasheet Page 5 FQA33N10 Datasheet Page 6 FQA33N10 Datasheet Page 7 FQA33N10 Datasheet Page 8

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FQA33N10 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs52mOhm @ 18A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 25V
FET Feature-
Power Dissipation (Max)163W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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