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FQA38N30

FQA38N30

For Reference Only

Part Number FQA38N30
PNEDA Part # FQA38N30
Description MOSFET N-CH 300V 38.4A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,336
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQA38N30 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQA38N30
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQA38N30, FQA38N30 Datasheet (Total Pages: 8, Size: 793.53 KB)
PDFFQA38N30 Datasheet Cover
FQA38N30 Datasheet Page 2 FQA38N30 Datasheet Page 3 FQA38N30 Datasheet Page 4 FQA38N30 Datasheet Page 5 FQA38N30 Datasheet Page 6 FQA38N30 Datasheet Page 7 FQA38N30 Datasheet Page 8

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FQA38N30 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C38.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs85mOhm @ 19.2A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4400pF @ 25V
FET Feature-
Power Dissipation (Max)290W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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