Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FQA40N25

FQA40N25

For Reference Only

Part Number FQA40N25
PNEDA Part # FQA40N25
Description MOSFET N-CH 250V 40A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,380
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQA40N25 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQA40N25
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQA40N25, FQA40N25 Datasheet (Total Pages: 10, Size: 1,980.53 KB)
PDFFQA40N25 Datasheet Cover
FQA40N25 Datasheet Page 2 FQA40N25 Datasheet Page 3 FQA40N25 Datasheet Page 4 FQA40N25 Datasheet Page 5 FQA40N25 Datasheet Page 6 FQA40N25 Datasheet Page 7 FQA40N25 Datasheet Page 8 FQA40N25 Datasheet Page 9 FQA40N25 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FQA40N25 Datasheet
  • where to find FQA40N25
  • ON Semiconductor

  • ON Semiconductor FQA40N25
  • FQA40N25 PDF Datasheet
  • FQA40N25 Stock

  • FQA40N25 Pinout
  • Datasheet FQA40N25
  • FQA40N25 Supplier

  • ON Semiconductor Distributor
  • FQA40N25 Price
  • FQA40N25 Distributor

FQA40N25 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs70mOhm @ 20A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4000pF @ 25V
FET Feature-
Power Dissipation (Max)280W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

The Products You May Be Interested In

IPP093N06N3GHKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 34µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 30V

FET Feature

-

Power Dissipation (Max)

71W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

BSR316PL6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

360mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.8Ohm @ 360mA, 10V

Vgs(th) (Max) @ Id

1V @ 170µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

165pF @ 25V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SC-59

Package / Case

TO-236-3, SC-59, SOT-23-3

IRFB4321GPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

83A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

15mOhm @ 33A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4460pF @ 25V

FET Feature

-

Power Dissipation (Max)

330W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

94-4849PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

TP2640LG-G

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

86mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

15Ohm @ 300mA, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 25V

FET Feature

-

Power Dissipation (Max)

740mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

S34ML08G101BHI000

S34ML08G101BHI000

SkyHigh Memory Limited

IC FLASH 8G PARALLEL 63BGA

76SB08ST

76SB08ST

Grayhill Inc.

SWITCH ROCKER DIP SPST 150MA 30V

DG212BDY

DG212BDY

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

TAJC337M006RNJ

TAJC337M006RNJ

CAP TANT 330UF 20% 6.3V 2312

MX30LF1G18AC-XKI

MX30LF1G18AC-XKI

Macronix

IC FLASH 1G PARALLEL 63VFBGA

MMBT2222

MMBT2222

ON Semiconductor

TRANS NPN 30V 0.6A SOT-23

SMF5.0A

SMF5.0A

Littelfuse

TVS DIODE 5V 9.2V SOD123F

S3A-13-F

S3A-13-F

Diodes Incorporated

DIODE GEN PURP 50V 3A SMC

MAX1044ESA+

MAX1044ESA+

Maxim Integrated

IC REG CHARG PUMP INV 20MA 8SOIC

MCR22-8G

MCR22-8G

ON Semiconductor

THYRISTOR SCR 1.5A 600V TO-92

DSPIC30F4013-30I/PT

DSPIC30F4013-30I/PT

Microchip Technology

IC MCU 16BIT 48KB FLASH 44TQFP

CDSOT23-T24CAN

CDSOT23-T24CAN

Bourns

TVS DIODE 24V 40V SOT23