Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FQA5N90_F109

FQA5N90_F109

For Reference Only

Part Number FQA5N90_F109
PNEDA Part # FQA5N90_F109
Description MOSFET N-CH 900V 5.8A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,860
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQA5N90_F109 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQA5N90_F109
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQA5N90_F109, FQA5N90_F109 Datasheet (Total Pages: 8, Size: 794.73 KB)
PDFFQA5N90_F109 Datasheet Cover
FQA5N90_F109 Datasheet Page 2 FQA5N90_F109 Datasheet Page 3 FQA5N90_F109 Datasheet Page 4 FQA5N90_F109 Datasheet Page 5 FQA5N90_F109 Datasheet Page 6 FQA5N90_F109 Datasheet Page 7 FQA5N90_F109 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FQA5N90_F109 Datasheet
  • where to find FQA5N90_F109
  • ON Semiconductor

  • ON Semiconductor FQA5N90_F109
  • FQA5N90_F109 PDF Datasheet
  • FQA5N90_F109 Stock

  • FQA5N90_F109 Pinout
  • Datasheet FQA5N90_F109
  • FQA5N90_F109 Supplier

  • ON Semiconductor Distributor
  • FQA5N90_F109 Price
  • FQA5N90_F109 Distributor

FQA5N90_F109 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.3Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1550pF @ 25V
FET Feature-
Power Dissipation (Max)185W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

The Products You May Be Interested In

SUM18N25-165-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

165mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1950pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.75W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D2Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

RS3E135BNGZETB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14.6mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

8.3nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

680pF @ 15V

FET Feature

-

Power Dissipation (Max)

2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)

FDH055N15A

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

158A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.9mOhm @ 120A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

92nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9445pF @ 75V

FET Feature

-

Power Dissipation (Max)

429W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

DMN2005UPS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

20A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

4.6mOhm @ 13.5A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

142nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

5337pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN

BSO051N03MS G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

14A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.1mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4300pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.56W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-DSO-8

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

PMEG4010EH,115

PMEG4010EH,115

Nexperia

DIODE SCHOTTKY 40V 1A SOD123F

DS5000FP-16

DS5000FP-16

Maxim Integrated

IC MCU 8BIT EXTRNL NVSRAM 80QFP

ADM2491EBRWZ

ADM2491EBRWZ

Analog Devices

DGTL ISO 5KV RS422/RS485 16SOIC

LT1963AEST-1.8#PBF

LT1963AEST-1.8#PBF

Linear Technology/Analog Devices

IC REG LINEAR 1.8V 1.5A SOT223-3

HDSP-0770

HDSP-0770

Broadcom

DISPLAY 4X7 NUM RDP BCD HER

LTC4300A-1CMS8#PBF

LTC4300A-1CMS8#PBF

Linear Technology/Analog Devices

IC ACCELERATOR I2C HOTSWAP 8MSOP

W25Q64DWSSIG

W25Q64DWSSIG

Winbond Electronics

IC FLASH 64M SPI 104MHZ 8SOIC

ES1JAF

ES1JAF

ON Semiconductor

DIODE GEN PURP 600V 1A DO214AD

ADUM1401BRWZ

ADUM1401BRWZ

Analog Devices

DGTL ISO 2.5KV GEN PURP 16SOIC

ST1S40IPUR

ST1S40IPUR

STMicroelectronics

IC REG BUCK ADJ 3A 8VFQFPN

LTC1326IS8-2.5#PBF

LTC1326IS8-2.5#PBF

Linear Technology/Analog Devices

IC PREC TRPL SUPPLY MONITR 8SOIC

3362W-1-103

3362W-1-103

Bourns

TRIMMER 10K OHM 0.5W PC PIN SIDE