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FQA6N90_F109

FQA6N90_F109

For Reference Only

Part Number FQA6N90_F109
PNEDA Part # FQA6N90_F109
Description MOSFET N-CH 900V 6.4A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,986
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQA6N90_F109 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQA6N90_F109
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQA6N90_F109, FQA6N90_F109 Datasheet (Total Pages: 8, Size: 761.47 KB)
PDFFQA6N90_F109 Datasheet Cover
FQA6N90_F109 Datasheet Page 2 FQA6N90_F109 Datasheet Page 3 FQA6N90_F109 Datasheet Page 4 FQA6N90_F109 Datasheet Page 5 FQA6N90_F109 Datasheet Page 6 FQA6N90_F109 Datasheet Page 7 FQA6N90_F109 Datasheet Page 8

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FQA6N90_F109 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C6.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.9Ohm @ 3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs52nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1880pF @ 25V
FET Feature-
Power Dissipation (Max)198W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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