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FQA7N80C-F109

FQA7N80C-F109

For Reference Only

Part Number FQA7N80C-F109
PNEDA Part # FQA7N80C-F109
Description MOSFET N-CH 800V 7A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 10,716
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQA7N80C-F109 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQA7N80C-F109
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQA7N80C-F109, FQA7N80C-F109 Datasheet (Total Pages: 8, Size: 2,156.6 KB)
PDFFQA7N80C-F109 Datasheet Cover
FQA7N80C-F109 Datasheet Page 2 FQA7N80C-F109 Datasheet Page 3 FQA7N80C-F109 Datasheet Page 4 FQA7N80C-F109 Datasheet Page 5 FQA7N80C-F109 Datasheet Page 6 FQA7N80C-F109 Datasheet Page 7 FQA7N80C-F109 Datasheet Page 8

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FQA7N80C-F109 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.9Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1680pF @ 25V
FET Feature-
Power Dissipation (Max)198W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

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