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FQA85N06

FQA85N06

For Reference Only

Part Number FQA85N06
PNEDA Part # FQA85N06
Description MOSFET N-CH 60V 100A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,542
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQA85N06 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQA85N06
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQA85N06, FQA85N06 Datasheet (Total Pages: 8, Size: 685.5 KB)
PDFFQA85N06 Datasheet Cover
FQA85N06 Datasheet Page 2 FQA85N06 Datasheet Page 3 FQA85N06 Datasheet Page 4 FQA85N06 Datasheet Page 5 FQA85N06 Datasheet Page 6 FQA85N06 Datasheet Page 7 FQA85N06 Datasheet Page 8

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FQA85N06 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs112nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds4120pF @ 25V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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