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FQA8N80C

FQA8N80C

For Reference Only

Part Number FQA8N80C
PNEDA Part # FQA8N80C
Description MOSFET N-CH 800V 8.4A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,628
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQA8N80C Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQA8N80C
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQA8N80C, FQA8N80C Datasheet (Total Pages: 8, Size: 604.2 KB)
PDFFQA8N80C Datasheet Cover
FQA8N80C Datasheet Page 2 FQA8N80C Datasheet Page 3 FQA8N80C Datasheet Page 4 FQA8N80C Datasheet Page 5 FQA8N80C Datasheet Page 6 FQA8N80C Datasheet Page 7 FQA8N80C Datasheet Page 8

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FQA8N80C Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.55Ohm @ 4.2A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2050pF @ 25V
FET Feature-
Power Dissipation (Max)220W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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