Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FQA9N90-F109

FQA9N90-F109

For Reference Only

Part Number FQA9N90-F109
PNEDA Part # FQA9N90-F109
Description MOSFET N-CH 900V 8.6A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,050
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQA9N90-F109 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQA9N90-F109
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQA9N90-F109, FQA9N90-F109 Datasheet (Total Pages: 8, Size: 1,872.37 KB)
PDFFQA9N90-F109 Datasheet Cover
FQA9N90-F109 Datasheet Page 2 FQA9N90-F109 Datasheet Page 3 FQA9N90-F109 Datasheet Page 4 FQA9N90-F109 Datasheet Page 5 FQA9N90-F109 Datasheet Page 6 FQA9N90-F109 Datasheet Page 7 FQA9N90-F109 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FQA9N90-F109 Datasheet
  • where to find FQA9N90-F109
  • ON Semiconductor

  • ON Semiconductor FQA9N90-F109
  • FQA9N90-F109 PDF Datasheet
  • FQA9N90-F109 Stock

  • FQA9N90-F109 Pinout
  • Datasheet FQA9N90-F109
  • FQA9N90-F109 Supplier

  • ON Semiconductor Distributor
  • FQA9N90-F109 Price
  • FQA9N90-F109 Distributor

FQA9N90-F109 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C8.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.3Ohm @ 4.3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V
FET Feature-
Power Dissipation (Max)240W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

The Products You May Be Interested In

IRFD9210PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

400mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3Ohm @ 240mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

170pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

4-DIP, Hexdip, HVMDIP

Package / Case

4-DIP (0.300", 7.62mm)

R6030ENX

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

85nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2100pF @ 25V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FM

Package / Case

TO-220-3 Full Pack

IXFH13N80

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

800mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

155nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4200pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

SFT1345-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

275mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1020pF @ 20V

FET Feature

-

Power Dissipation (Max)

1W (Ta), 35W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TP-FA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

2N7638-GA

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

FET Type

-

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

8A (Tc) (158°C)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

170mOhm @ 8A

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

720pF @ 35V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 225°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-276

Package / Case

TO-276AA

Recently Sold

CDSOT23-SM712

CDSOT23-SM712

Bourns

TVS DIODE 7V/12V 14V/26V SOT23-3

USBUF01W6

USBUF01W6

STMicroelectronics

FILTER RC(PI) 33 OHM/47PF SMD

XC7Z020-1CLG400C

XC7Z020-1CLG400C

Xilinx

IC SOC CORTEX-A9 667MHZ 400BGA

564R60GAT22

564R60GAT22

Vishay Cera-Mite

CAP CER 220PF 6KV X5F RADIAL

SSM3K15AFS,LF

SSM3K15AFS,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 0.1A SSM

MT8870DSR1

MT8870DSR1

Microchip Technology

IC RECEIVER DTMF 18SOIC

PI4ULS5V202UEX

PI4ULS5V202UEX

Diodes Incorporated

IC TRNSLTR BIDIRECTIONAL 8MSOP

ABS05-32.768KHZ-T

ABS05-32.768KHZ-T

Abracon

CRYSTAL 32.7680KHZ 12.5PF SMD

MCP73862T-I/SL

MCP73862T-I/SL

Microchip Technology

IC LI-ION CTRLR 8.2/8.4V 16SOIC

SML-D12U8WT86

SML-D12U8WT86

Rohm Semiconductor

LED RED DIFFUSED 0603 SMD

MAX912ESE

MAX912ESE

Maxim Integrated

IC COMPARATOR TTL HS LP 16-SOIC

ADG3308BRUZ

ADG3308BRUZ

Analog Devices

IC TRNSLTR BIDIRECTIONAL 20TSSOP