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FQB1N60TM

FQB1N60TM

For Reference Only

Part Number FQB1N60TM
PNEDA Part # FQB1N60TM
Description MOSFET N-CH 600V 1.2A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,138
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQB1N60TM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQB1N60TM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQB1N60TM, FQB1N60TM Datasheet (Total Pages: 9, Size: 545.73 KB)
PDFFQB1N60TM Datasheet Cover
FQB1N60TM Datasheet Page 2 FQB1N60TM Datasheet Page 3 FQB1N60TM Datasheet Page 4 FQB1N60TM Datasheet Page 5 FQB1N60TM Datasheet Page 6 FQB1N60TM Datasheet Page 7 FQB1N60TM Datasheet Page 8 FQB1N60TM Datasheet Page 9

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FQB1N60TM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C1.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11.5Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds150pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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