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FQB25N33TM-F085

FQB25N33TM-F085

For Reference Only

Part Number FQB25N33TM-F085
PNEDA Part # FQB25N33TM-F085
Description MOSFET N-CH 330V 25A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,130
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQB25N33TM-F085 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQB25N33TM-F085
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQB25N33TM-F085, FQB25N33TM-F085 Datasheet (Total Pages: 7, Size: 1,113.42 KB)
PDFFQB25N33TM-F085 Datasheet Cover
FQB25N33TM-F085 Datasheet Page 2 FQB25N33TM-F085 Datasheet Page 3 FQB25N33TM-F085 Datasheet Page 4 FQB25N33TM-F085 Datasheet Page 5 FQB25N33TM-F085 Datasheet Page 6 FQB25N33TM-F085 Datasheet Page 7

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FQB25N33TM-F085 Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)330V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs230mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs75nC @ 15V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2010pF @ 25V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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