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FQB30N06LTM

FQB30N06LTM

For Reference Only

Part Number FQB30N06LTM
PNEDA Part # FQB30N06LTM
Description MOSFET N-CH 60V 32A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 18,162
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQB30N06LTM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQB30N06LTM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQB30N06LTM, FQB30N06LTM Datasheet (Total Pages: 10, Size: 1,226.65 KB)
PDFFQB30N06LTM Datasheet Cover
FQB30N06LTM Datasheet Page 2 FQB30N06LTM Datasheet Page 3 FQB30N06LTM Datasheet Page 4 FQB30N06LTM Datasheet Page 5 FQB30N06LTM Datasheet Page 6 FQB30N06LTM Datasheet Page 7 FQB30N06LTM Datasheet Page 8 FQB30N06LTM Datasheet Page 9 FQB30N06LTM Datasheet Page 10

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FQB30N06LTM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs35mOhm @ 16A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1040pF @ 25V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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