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FQB50N06LTM

FQB50N06LTM

For Reference Only

Part Number FQB50N06LTM
PNEDA Part # FQB50N06LTM
Description MOSFET N-CH 60V 52.4A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,028
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQB50N06LTM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQB50N06LTM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQB50N06LTM, FQB50N06LTM Datasheet (Total Pages: 10, Size: 980.29 KB)
PDFFQB50N06LTM Datasheet Cover
FQB50N06LTM Datasheet Page 2 FQB50N06LTM Datasheet Page 3 FQB50N06LTM Datasheet Page 4 FQB50N06LTM Datasheet Page 5 FQB50N06LTM Datasheet Page 6 FQB50N06LTM Datasheet Page 7 FQB50N06LTM Datasheet Page 8 FQB50N06LTM Datasheet Page 9 FQB50N06LTM Datasheet Page 10

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FQB50N06LTM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C52.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs21mOhm @ 26.2A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1630pF @ 25V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 121W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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