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FQB85N06TM_AM002

FQB85N06TM_AM002

For Reference Only

Part Number FQB85N06TM_AM002
PNEDA Part # FQB85N06TM_AM002
Description MOSFET N-CH 60V 85A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,490
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQB85N06TM_AM002 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQB85N06TM_AM002
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQB85N06TM_AM002, FQB85N06TM_AM002 Datasheet (Total Pages: 9, Size: 655.58 KB)
PDFFQB85N06TM_AM002 Datasheet Cover
FQB85N06TM_AM002 Datasheet Page 2 FQB85N06TM_AM002 Datasheet Page 3 FQB85N06TM_AM002 Datasheet Page 4 FQB85N06TM_AM002 Datasheet Page 5 FQB85N06TM_AM002 Datasheet Page 6 FQB85N06TM_AM002 Datasheet Page 7 FQB85N06TM_AM002 Datasheet Page 8 FQB85N06TM_AM002 Datasheet Page 9

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FQB85N06TM_AM002 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10mOhm @ 42.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs112nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds4120pF @ 25V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 160W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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