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FQD10N20LTM

FQD10N20LTM

For Reference Only

Part Number FQD10N20LTM
PNEDA Part # FQD10N20LTM
Description MOSFET N-CH 200V 7.6A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,282
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD10N20LTM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD10N20LTM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD10N20LTM, FQD10N20LTM Datasheet (Total Pages: 10, Size: 907.48 KB)
PDFFQD10N20LTF Datasheet Cover
FQD10N20LTF Datasheet Page 2 FQD10N20LTF Datasheet Page 3 FQD10N20LTF Datasheet Page 4 FQD10N20LTF Datasheet Page 5 FQD10N20LTF Datasheet Page 6 FQD10N20LTF Datasheet Page 7 FQD10N20LTF Datasheet Page 8 FQD10N20LTF Datasheet Page 9 FQD10N20LTF Datasheet Page 10

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FQD10N20LTM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs360mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds830pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 51W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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