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FQD16N25CTM

FQD16N25CTM

For Reference Only

Part Number FQD16N25CTM
PNEDA Part # FQD16N25CTM
Description MOSFET N-CH 250V 16A D-PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 100,812
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD16N25CTM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD16N25CTM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD16N25CTM, FQD16N25CTM Datasheet (Total Pages: 10, Size: 611.78 KB)
PDFFQD16N25CTM_F080 Datasheet Cover
FQD16N25CTM_F080 Datasheet Page 2 FQD16N25CTM_F080 Datasheet Page 3 FQD16N25CTM_F080 Datasheet Page 4 FQD16N25CTM_F080 Datasheet Page 5 FQD16N25CTM_F080 Datasheet Page 6 FQD16N25CTM_F080 Datasheet Page 7 FQD16N25CTM_F080 Datasheet Page 8 FQD16N25CTM_F080 Datasheet Page 9 FQD16N25CTM_F080 Datasheet Page 10

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FQD16N25CTM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs270mOhm @ 8A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs53.5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1080pF @ 25V
FET Feature-
Power Dissipation (Max)160W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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