Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FQD16N25CTM

FQD16N25CTM

For Reference Only

Part Number FQD16N25CTM
PNEDA Part # FQD16N25CTM
Description MOSFET N-CH 250V 16A D-PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 100,812
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD16N25CTM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD16N25CTM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD16N25CTM, FQD16N25CTM Datasheet (Total Pages: 10, Size: 611.78 KB)
PDFFQD16N25CTM_F080 Datasheet Cover
FQD16N25CTM_F080 Datasheet Page 2 FQD16N25CTM_F080 Datasheet Page 3 FQD16N25CTM_F080 Datasheet Page 4 FQD16N25CTM_F080 Datasheet Page 5 FQD16N25CTM_F080 Datasheet Page 6 FQD16N25CTM_F080 Datasheet Page 7 FQD16N25CTM_F080 Datasheet Page 8 FQD16N25CTM_F080 Datasheet Page 9 FQD16N25CTM_F080 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FQD16N25CTM Datasheet
  • where to find FQD16N25CTM
  • ON Semiconductor

  • ON Semiconductor FQD16N25CTM
  • FQD16N25CTM PDF Datasheet
  • FQD16N25CTM Stock

  • FQD16N25CTM Pinout
  • Datasheet FQD16N25CTM
  • FQD16N25CTM Supplier

  • ON Semiconductor Distributor
  • FQD16N25CTM Price
  • FQD16N25CTM Distributor

FQD16N25CTM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs270mOhm @ 8A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs53.5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1080pF @ 25V
FET Feature-
Power Dissipation (Max)160W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

Manufacturer

IXYS

Series

TrenchMV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

280A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9700pF @ 25V

FET Feature

-

Power Dissipation (Max)

550W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

STD5N65M6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

SPD14N06S2-80

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

80mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

4V @ 14µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 25V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

P-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

ZXMN3A01FTC

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

120mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

190pF @ 25V

FET Feature

-

Power Dissipation (Max)

625mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

TK50E06K3(S1SS-Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIV

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

Recently Sold

U6264BDC07LLG1

U6264BDC07LLG1

Alliance Memory, Inc.

IC SRAM 64K PARALLEL 28DIP

A3P250-VQG100I

A3P250-VQG100I

Microsemi

IC FPGA 68 I/O 100VQFP

MMSZ4683T1G

MMSZ4683T1G

ON Semiconductor

DIODE ZENER 3V 500MW SOD123

MAX3232ESE+

MAX3232ESE+

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16SO

SMF5.0A

SMF5.0A

Littelfuse

TVS DIODE 5V 9.2V SOD123F

FDS9431A

FDS9431A

ON Semiconductor

MOSFET P-CH 20V 3.5A 8SOIC

TDA04H0SB1

TDA04H0SB1

C&K

SWITCH SLIDE DIP SPST 25MA 24V

DS2438Z+T&R

DS2438Z+T&R

Maxim Integrated

IC MONITOR SMART BATTERY 8-SOIC

DAN217UMTL

DAN217UMTL

Rohm Semiconductor

DIODE ARRAY GP 80V 100MA UMD3F

PVG612ASPBF

PVG612ASPBF

Infineon Technologies

SSR RELAY SPST-NO 2A 0-60V

NC7SZ125P5X

NC7SZ125P5X

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-5

EVQ-PAC09K

EVQ-PAC09K

Panasonic Electronic Components

SWITCH TACTILE SPST-NO 0.02A 15V