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FQD2N80TM

FQD2N80TM

For Reference Only

Part Number FQD2N80TM
PNEDA Part # FQD2N80TM
Description MOSFET N-CH 800V 1.8A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,570
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD2N80TM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD2N80TM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD2N80TM, FQD2N80TM Datasheet (Total Pages: 10, Size: 952.17 KB)
PDFFQD2N80TM Datasheet Cover
FQD2N80TM Datasheet Page 2 FQD2N80TM Datasheet Page 3 FQD2N80TM Datasheet Page 4 FQD2N80TM Datasheet Page 5 FQD2N80TM Datasheet Page 6 FQD2N80TM Datasheet Page 7 FQD2N80TM Datasheet Page 8 FQD2N80TM Datasheet Page 9 FQD2N80TM Datasheet Page 10

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FQD2N80TM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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