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FQD3P50TM-AM002BLT

FQD3P50TM-AM002BLT

For Reference Only

Part Number FQD3P50TM-AM002BLT
PNEDA Part # FQD3P50TM-AM002BLT
Description QF -500V 4.9OHM DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD3P50TM-AM002BLT Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD3P50TM-AM002BLT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD3P50TM-AM002BLT, FQD3P50TM-AM002BLT Datasheet (Total Pages: 8, Size: 400.38 KB)
PDFFQD3P50TM-AM002BLT Datasheet Cover
FQD3P50TM-AM002BLT Datasheet Page 2 FQD3P50TM-AM002BLT Datasheet Page 3 FQD3P50TM-AM002BLT Datasheet Page 4 FQD3P50TM-AM002BLT Datasheet Page 5 FQD3P50TM-AM002BLT Datasheet Page 6 FQD3P50TM-AM002BLT Datasheet Page 7 FQD3P50TM-AM002BLT Datasheet Page 8

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FQD3P50TM-AM002BLT Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.9Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds660pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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