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FQD4N20LTM

FQD4N20LTM

For Reference Only

Part Number FQD4N20LTM
PNEDA Part # FQD4N20LTM
Description MOSFET N-CH 200V 3.2A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,334
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD4N20LTM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD4N20LTM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD4N20LTM, FQD4N20LTM Datasheet (Total Pages: 9, Size: 521.23 KB)
PDFFQD4N20LTF Datasheet Cover
FQD4N20LTF Datasheet Page 2 FQD4N20LTF Datasheet Page 3 FQD4N20LTF Datasheet Page 4 FQD4N20LTF Datasheet Page 5 FQD4N20LTF Datasheet Page 6 FQD4N20LTF Datasheet Page 7 FQD4N20LTF Datasheet Page 8 FQD4N20LTF Datasheet Page 9

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FQD4N20LTM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs1.35Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.2nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds310pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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