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FQI11P06TU

FQI11P06TU

For Reference Only

Part Number FQI11P06TU
PNEDA Part # FQI11P06TU
Description MOSFET P-CH 60V 11.4A I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,672
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQI11P06TU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQI11P06TU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQI11P06TU, FQI11P06TU Datasheet (Total Pages: 9, Size: 1,040.71 KB)
PDFFQI11P06TU Datasheet Cover
FQI11P06TU Datasheet Page 2 FQI11P06TU Datasheet Page 3 FQI11P06TU Datasheet Page 4 FQI11P06TU Datasheet Page 5 FQI11P06TU Datasheet Page 6 FQI11P06TU Datasheet Page 7 FQI11P06TU Datasheet Page 8 FQI11P06TU Datasheet Page 9

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FQI11P06TU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs175mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 53W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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