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FQI4N20LTU

FQI4N20LTU

For Reference Only

Part Number FQI4N20LTU
PNEDA Part # FQI4N20LTU
Description MOSFET N-CH 200V 3.8A I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,802
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQI4N20LTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQI4N20LTU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQI4N20LTU, FQI4N20LTU Datasheet (Total Pages: 9, Size: 519.06 KB)
PDFFQB4N20LTM Datasheet Cover
FQB4N20LTM Datasheet Page 2 FQB4N20LTM Datasheet Page 3 FQB4N20LTM Datasheet Page 4 FQB4N20LTM Datasheet Page 5 FQB4N20LTM Datasheet Page 6 FQB4N20LTM Datasheet Page 7 FQB4N20LTM Datasheet Page 8 FQB4N20LTM Datasheet Page 9

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FQI4N20LTU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs1.35Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.2nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds310pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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