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FQI9N50TU

FQI9N50TU

For Reference Only

Part Number FQI9N50TU
PNEDA Part # FQI9N50TU
Description MOSFET N-CH 500V 9A I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,928
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQI9N50TU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQI9N50TU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQI9N50TU, FQI9N50TU Datasheet (Total Pages: 9, Size: 705.41 KB)
PDFFQI9N50TU Datasheet Cover
FQI9N50TU Datasheet Page 2 FQI9N50TU Datasheet Page 3 FQI9N50TU Datasheet Page 4 FQI9N50TU Datasheet Page 5 FQI9N50TU Datasheet Page 6 FQI9N50TU Datasheet Page 7 FQI9N50TU Datasheet Page 8 FQI9N50TU Datasheet Page 9

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FQI9N50TU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs730mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1450pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 147W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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