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FQNL2N50BTA

FQNL2N50BTA

For Reference Only

Part Number FQNL2N50BTA
PNEDA Part # FQNL2N50BTA
Description MOSFET N-CH 500V 0.35A TO-92-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 18,432
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQNL2N50BTA Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQNL2N50BTA
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQNL2N50BTA, FQNL2N50BTA Datasheet (Total Pages: 10, Size: 971.95 KB)
PDFFQNL2N50BTA Datasheet Cover
FQNL2N50BTA Datasheet Page 2 FQNL2N50BTA Datasheet Page 3 FQNL2N50BTA Datasheet Page 4 FQNL2N50BTA Datasheet Page 5 FQNL2N50BTA Datasheet Page 6 FQNL2N50BTA Datasheet Page 7 FQNL2N50BTA Datasheet Page 8 FQNL2N50BTA Datasheet Page 9 FQNL2N50BTA Datasheet Page 10

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FQNL2N50BTA Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C350mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.3Ohm @ 175mA, 10V
Vgs(th) (Max) @ Id3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds230pF @ 25V
FET Feature-
Power Dissipation (Max)1.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 Long Body (Formed Leads)

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