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FQP18N50V2

FQP18N50V2

For Reference Only

Part Number FQP18N50V2
PNEDA Part # FQP18N50V2
Description MOSFET N-CH 500V 18A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,364
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQP18N50V2 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQP18N50V2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQP18N50V2, FQP18N50V2 Datasheet (Total Pages: 10, Size: 1,213.6 KB)
PDFFQP18N50V2 Datasheet Cover
FQP18N50V2 Datasheet Page 2 FQP18N50V2 Datasheet Page 3 FQP18N50V2 Datasheet Page 4 FQP18N50V2 Datasheet Page 5 FQP18N50V2 Datasheet Page 6 FQP18N50V2 Datasheet Page 7 FQP18N50V2 Datasheet Page 8 FQP18N50V2 Datasheet Page 9 FQP18N50V2 Datasheet Page 10

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FQP18N50V2 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs265mOhm @ 9A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3290pF @ 25V
FET Feature-
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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