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FQP22N30

FQP22N30

For Reference Only

Part Number FQP22N30
PNEDA Part # FQP22N30
Manufacturer ON Semiconductor
Description MOSFET N-CH 300V 21A TO-220
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 2,026
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Apr 25 - Apr 30 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

FQP22N30 Resources

Brand ON Semiconductor
Mfr. Part NumberFQP22N30
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQP22N30, FQP22N30 Datasheet (Total Pages: 10, Size: 800.26 KB)
PDFFQP22N30 Datasheet Cover
FQP22N30 Datasheet Page 2 FQP22N30 Datasheet Page 3 FQP22N30 Datasheet Page 4 FQP22N30 Datasheet Page 5 FQP22N30 Datasheet Page 6 FQP22N30 Datasheet Page 7 FQP22N30 Datasheet Page 8 FQP22N30 Datasheet Page 9 FQP22N30 Datasheet Page 10

FQP22N30 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 25V
FET Feature-
Power Dissipation (Max)170W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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