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FQP2N30

FQP2N30

For Reference Only

Part Number FQP2N30
PNEDA Part # FQP2N30
Description MOSFET N-CH 300V 2.1A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,510
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQP2N30 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQP2N30
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQP2N30, FQP2N30 Datasheet (Total Pages: 8, Size: 732.35 KB)
PDFFQP2N30 Datasheet Cover
FQP2N30 Datasheet Page 2 FQP2N30 Datasheet Page 3 FQP2N30 Datasheet Page 4 FQP2N30 Datasheet Page 5 FQP2N30 Datasheet Page 6 FQP2N30 Datasheet Page 7 FQP2N30 Datasheet Page 8

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FQP2N30 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.7Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds130pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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