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FQP2N80

FQP2N80

For Reference Only

Part Number FQP2N80
PNEDA Part # FQP2N80
Description MOSFET N-CH 800V 2.4A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,616
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQP2N80 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQP2N80
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQP2N80, FQP2N80 Datasheet (Total Pages: 10, Size: 544.08 KB)
PDFFQP2N80 Datasheet Cover
FQP2N80 Datasheet Page 2 FQP2N80 Datasheet Page 3 FQP2N80 Datasheet Page 4 FQP2N80 Datasheet Page 5 FQP2N80 Datasheet Page 6 FQP2N80 Datasheet Page 7 FQP2N80 Datasheet Page 8 FQP2N80 Datasheet Page 9 FQP2N80 Datasheet Page 10

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FQP2N80 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.3Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 25V
FET Feature-
Power Dissipation (Max)85W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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