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FQP3N50C-F080

FQP3N50C-F080

For Reference Only

Part Number FQP3N50C-F080
PNEDA Part # FQP3N50C-F080
Description MOSFET N-CH 500V 1.8A TO220-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 18,168
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQP3N50C-F080 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQP3N50C-F080
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQP3N50C-F080, FQP3N50C-F080 Datasheet (Total Pages: 10, Size: 976.73 KB)
PDFFQP3N50C-F080 Datasheet Cover
FQP3N50C-F080 Datasheet Page 2 FQP3N50C-F080 Datasheet Page 3 FQP3N50C-F080 Datasheet Page 4 FQP3N50C-F080 Datasheet Page 5 FQP3N50C-F080 Datasheet Page 6 FQP3N50C-F080 Datasheet Page 7 FQP3N50C-F080 Datasheet Page 8 FQP3N50C-F080 Datasheet Page 9 FQP3N50C-F080 Datasheet Page 10

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FQP3N50C-F080 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds365pF @ 25V
FET Feature-
Power Dissipation (Max)62W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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