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FQP47P06

FQP47P06

For Reference Only

Part Number FQP47P06
PNEDA Part # FQP47P06
Description MOSFET P-CH 60V 47A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 15,900
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQP47P06 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQP47P06
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQP47P06, FQP47P06 Datasheet (Total Pages: 10, Size: 798.44 KB)
PDFFQP47P06_SW82049 Datasheet Cover
FQP47P06_SW82049 Datasheet Page 2 FQP47P06_SW82049 Datasheet Page 3 FQP47P06_SW82049 Datasheet Page 4 FQP47P06_SW82049 Datasheet Page 5 FQP47P06_SW82049 Datasheet Page 6 FQP47P06_SW82049 Datasheet Page 7 FQP47P06_SW82049 Datasheet Page 8 FQP47P06_SW82049 Datasheet Page 9 FQP47P06_SW82049 Datasheet Page 10

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FQP47P06 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs26mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds3600pF @ 25V
FET Feature-
Power Dissipation (Max)160W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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