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FQP55N10

FQP55N10

For Reference Only

Part Number FQP55N10
PNEDA Part # FQP55N10
Description MOSFET N-CH 100V 55A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,892
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 28 - May 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQP55N10 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQP55N10
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQP55N10, FQP55N10 Datasheet (Total Pages: 10, Size: 773.56 KB)
PDFFQP55N10 Datasheet Cover
FQP55N10 Datasheet Page 2 FQP55N10 Datasheet Page 3 FQP55N10 Datasheet Page 4 FQP55N10 Datasheet Page 5 FQP55N10 Datasheet Page 6 FQP55N10 Datasheet Page 7 FQP55N10 Datasheet Page 8 FQP55N10 Datasheet Page 9 FQP55N10 Datasheet Page 10

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FQP55N10 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs26mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs98nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2730pF @ 25V
FET Feature-
Power Dissipation (Max)155W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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