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FQP6N60C

FQP6N60C

For Reference Only

Part Number FQP6N60C
PNEDA Part # FQP6N60C
Description MOSFET N-CH 600V 5.5A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 20,736
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQP6N60C Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQP6N60C
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQP6N60C, FQP6N60C Datasheet (Total Pages: 12, Size: 1,048.74 KB)
PDFFQP6N60C_F080 Datasheet Cover
FQP6N60C_F080 Datasheet Page 2 FQP6N60C_F080 Datasheet Page 3 FQP6N60C_F080 Datasheet Page 4 FQP6N60C_F080 Datasheet Page 5 FQP6N60C_F080 Datasheet Page 6 FQP6N60C_F080 Datasheet Page 7 FQP6N60C_F080 Datasheet Page 8 FQP6N60C_F080 Datasheet Page 9 FQP6N60C_F080 Datasheet Page 10 FQP6N60C_F080 Datasheet Page 11

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FQP6N60C Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds810pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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