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FQP8P10

FQP8P10

For Reference Only

Part Number FQP8P10
PNEDA Part # FQP8P10
Description MOSFET P-CH 100V 8A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 19,776
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQP8P10 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQP8P10
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQP8P10, FQP8P10 Datasheet (Total Pages: 10, Size: 795.2 KB)
PDFFQP8P10 Datasheet Cover
FQP8P10 Datasheet Page 2 FQP8P10 Datasheet Page 3 FQP8P10 Datasheet Page 4 FQP8P10 Datasheet Page 5 FQP8P10 Datasheet Page 6 FQP8P10 Datasheet Page 7 FQP8P10 Datasheet Page 8 FQP8P10 Datasheet Page 9 FQP8P10 Datasheet Page 10

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FQP8P10 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs530mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds470pF @ 25V
FET Feature-
Power Dissipation (Max)65W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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