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FQP9N25C

FQP9N25C

For Reference Only

Part Number FQP9N25C
PNEDA Part # FQP9N25C
Description MOSFET N-CH 250V 8.8A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,668
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQP9N25C Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQP9N25C
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQP9N25C, FQP9N25C Datasheet (Total Pages: 10, Size: 1,668.89 KB)
PDFFQP9N25CTSTU Datasheet Cover
FQP9N25CTSTU Datasheet Page 2 FQP9N25CTSTU Datasheet Page 3 FQP9N25CTSTU Datasheet Page 4 FQP9N25CTSTU Datasheet Page 5 FQP9N25CTSTU Datasheet Page 6 FQP9N25CTSTU Datasheet Page 7 FQP9N25CTSTU Datasheet Page 8 FQP9N25CTSTU Datasheet Page 9 FQP9N25CTSTU Datasheet Page 10

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FQP9N25C Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs430mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds710pF @ 25V
FET Feature-
Power Dissipation (Max)74W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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