Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FQPF12P20XDTU

FQPF12P20XDTU

For Reference Only

Part Number FQPF12P20XDTU
PNEDA Part # FQPF12P20XDTU
Description MOSFET P-CH 200V 7.3A TO-220F
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,628
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQPF12P20XDTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQPF12P20XDTU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQPF12P20XDTU, FQPF12P20XDTU Datasheet (Total Pages: 8, Size: 631.16 KB)
PDFFQPF12P20YDTU Datasheet Cover
FQPF12P20YDTU Datasheet Page 2 FQPF12P20YDTU Datasheet Page 3 FQPF12P20YDTU Datasheet Page 4 FQPF12P20YDTU Datasheet Page 5 FQPF12P20YDTU Datasheet Page 6 FQPF12P20YDTU Datasheet Page 7 FQPF12P20YDTU Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FQPF12P20XDTU Datasheet
  • where to find FQPF12P20XDTU
  • ON Semiconductor

  • ON Semiconductor FQPF12P20XDTU
  • FQPF12P20XDTU PDF Datasheet
  • FQPF12P20XDTU Stock

  • FQPF12P20XDTU Pinout
  • Datasheet FQPF12P20XDTU
  • FQPF12P20XDTU Supplier

  • ON Semiconductor Distributor
  • FQPF12P20XDTU Price
  • FQPF12P20XDTU Distributor

FQPF12P20XDTU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs470mOhm @ 3.65A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

SPB80N08S2L-07

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.8mOhm @ 67A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

233nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6820pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

BUK9609-40B,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

3600pF @ 25V

FET Feature

-

Power Dissipation (Max)

157W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SI5486DU-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

15mOhm @ 7.7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

2100pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 31W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PowerPak® ChipFet (3x1.9)

Package / Case

8-PowerVDFN

STP5N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II Plus

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

3.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 1.85A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

165pF @ 100V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

IRF5803TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

3.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

112mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1110pF @ 25V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Micro6™(TSOP-6)

Package / Case

SOT-23-6 Thin, TSOT-23-6

Recently Sold

MM3Z5V1ST1G

MM3Z5V1ST1G

ON Semiconductor

DIODE ZENER 5.1V 300MW SOD323

SMBJ12CA-TR

SMBJ12CA-TR

STMicroelectronics

TVS DIODE 12V 25.3V SMB

SZNUP2105LT1G

SZNUP2105LT1G

ON Semiconductor

TVS DIODE 24V 44V SOT23-3

BSS84-7-F

BSS84-7-F

Diodes Incorporated

MOSFET P-CH 50V 130MA SOT23-3

GP2Y1023AU0F

GP2Y1023AU0F

SHARP/Socle Technology

MOD DUST SENSOR 5PIN QFN

SS36FA

SS36FA

ON Semiconductor

DIODE SCHOTTKY 60V 3A SOD123FA

BLM18PG121SN1D

BLM18PG121SN1D

Murata

FERRITE BEAD 120 OHM 0603 1LN

MAX809SEUR+T

MAX809SEUR+T

Maxim Integrated

IC MPU/RESET CIRC SOT23-3

FT245RL-REEL

FT245RL-REEL

FTDI, Future Technology Devices International Ltd

IC USB TO PARALLEL FIFO 28-SSOP

MOCD217M

MOCD217M

ON Semiconductor

OPTOISO 2.5KV 2CH TRANS 8SOIC

FW2500025Z

FW2500025Z

Diodes Incorporated

CRYSTAL 25MHZ 20PF SMD

MAX1681ESA

MAX1681ESA

Maxim Integrated

IC REG CHARGE PUMP INV 8SOIC