Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FQPF5N60CYDTU

FQPF5N60CYDTU

For Reference Only

Part Number FQPF5N60CYDTU
PNEDA Part # FQPF5N60CYDTU
Description MOSFET N-CH 600V 4.5A TO-220F
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,946
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQPF5N60CYDTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQPF5N60CYDTU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQPF5N60CYDTU, FQPF5N60CYDTU Datasheet (Total Pages: 12, Size: 1,038.46 KB)
PDFFQPF5N60CYDTU Datasheet Cover
FQPF5N60CYDTU Datasheet Page 2 FQPF5N60CYDTU Datasheet Page 3 FQPF5N60CYDTU Datasheet Page 4 FQPF5N60CYDTU Datasheet Page 5 FQPF5N60CYDTU Datasheet Page 6 FQPF5N60CYDTU Datasheet Page 7 FQPF5N60CYDTU Datasheet Page 8 FQPF5N60CYDTU Datasheet Page 9 FQPF5N60CYDTU Datasheet Page 10 FQPF5N60CYDTU Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FQPF5N60CYDTU Datasheet
  • where to find FQPF5N60CYDTU
  • ON Semiconductor

  • ON Semiconductor FQPF5N60CYDTU
  • FQPF5N60CYDTU PDF Datasheet
  • FQPF5N60CYDTU Stock

  • FQPF5N60CYDTU Pinout
  • Datasheet FQPF5N60CYDTU
  • FQPF5N60CYDTU Supplier

  • ON Semiconductor Distributor
  • FQPF5N60CYDTU Price
  • FQPF5N60CYDTU Distributor

FQPF5N60CYDTU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds670pF @ 25V
FET Feature-
Power Dissipation (Max)33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F-3 (Y-Forming)
Package / CaseTO-220-3 Full Pack, Formed Leads

The Products You May Be Interested In

STP8NS25

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MESH OVERLAY™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

450mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

51.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

770pF @ 25V

FET Feature

-

Power Dissipation (Max)

80W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

10.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

130mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

5.2nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

330pF @ 25V

FET Feature

-

Power Dissipation (Max)

33W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SI4654DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

28.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3770pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 5.9W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

NVTFS4824NTAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

18.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.7mOhm @ 23A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1740pF @ 12V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta), 21W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN

FDS86540

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

18A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

90nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6410pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

SSCMRRN100MGAF5

SSCMRRN100MGAF5

Honeywell Sensing and Productivity Solutions

SENSOR PRES .1BAR GAUG 5V SMD

NCP81071BDR2G

NCP81071BDR2G

ON Semiconductor

IC MOSFET DVR HS 5A DUAL 8SOIC

IHLP2525CZERR47M01

IHLP2525CZERR47M01

Vishay Dale

FIXED IND 470NH 17.5A 4.2 MOHM

TLP350H(F)

TLP350H(F)

Toshiba Semiconductor and Storage

X36 PB-F PHOTOCOUPLER THRU HOLE

M27C256B-12F1

M27C256B-12F1

STMicroelectronics

IC EPROM 256K PARALLEL 28CDIP

LL4148

LL4148

ON Semiconductor

DIODE GEN PURP 100V 200MA SOD80

AUIRF1010ZS

AUIRF1010ZS

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

SQJ423EP-T1_GE3

SQJ423EP-T1_GE3

Vishay Siliconix

MOSFET P-CH 40V 55A POWERPAKSO-8

FSA5157L6X

FSA5157L6X

ON Semiconductor

IC SWITCH SPDT 6MICROPAK

NC7WZ00K8X

NC7WZ00K8X

ON Semiconductor

IC GATE NAND 2CH 2-INP US8

CG0603MLC-05LE

CG0603MLC-05LE

Bourns

VARISTOR 0603

FSAM30SH60A

FSAM30SH60A

ON Semiconductor

SMART POWER MODULE 30A SPM32-AA