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FQPF9N50CYDTU

FQPF9N50CYDTU

For Reference Only

Part Number FQPF9N50CYDTU
PNEDA Part # FQPF9N50CYDTU
Description MOSFET N-CH 500V 9A TO-220F
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,966
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQPF9N50CYDTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQPF9N50CYDTU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQPF9N50CYDTU, FQPF9N50CYDTU Datasheet (Total Pages: 10, Size: 845.61 KB)
PDFFQPF9N50CYDTU Datasheet Cover
FQPF9N50CYDTU Datasheet Page 2 FQPF9N50CYDTU Datasheet Page 3 FQPF9N50CYDTU Datasheet Page 4 FQPF9N50CYDTU Datasheet Page 5 FQPF9N50CYDTU Datasheet Page 6 FQPF9N50CYDTU Datasheet Page 7 FQPF9N50CYDTU Datasheet Page 8 FQPF9N50CYDTU Datasheet Page 9 FQPF9N50CYDTU Datasheet Page 10

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FQPF9N50CYDTU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs800mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1030pF @ 25V
FET Feature-
Power Dissipation (Max)44W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F-3 (Y-Forming)
Package / CaseTO-220-3 Full Pack, Formed Leads

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