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FQT3P20TF-SB82100

FQT3P20TF-SB82100

For Reference Only

Part Number FQT3P20TF-SB82100
PNEDA Part # FQT3P20TF-SB82100
Description MOSFET P-CH 200V 0.67A SOT-223-4
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,358
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQT3P20TF-SB82100 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQT3P20TF-SB82100
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQT3P20TF-SB82100, FQT3P20TF-SB82100 Datasheet (Total Pages: 8, Size: 870.67 KB)
PDFFQT3P20TF-SB82100 Datasheet Cover
FQT3P20TF-SB82100 Datasheet Page 2 FQT3P20TF-SB82100 Datasheet Page 3 FQT3P20TF-SB82100 Datasheet Page 4 FQT3P20TF-SB82100 Datasheet Page 5 FQT3P20TF-SB82100 Datasheet Page 6 FQT3P20TF-SB82100 Datasheet Page 7 FQT3P20TF-SB82100 Datasheet Page 8

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FQT3P20TF-SB82100 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C670mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.7Ohm @ 335mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds250pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223-4
Package / CaseTO-261-4, TO-261AA

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