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FQU12N20TU

FQU12N20TU

For Reference Only

Part Number FQU12N20TU
PNEDA Part # FQU12N20TU
Description MOSFET N-CH 200V 9A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,496
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQU12N20TU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQU12N20TU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU12N20TU, FQU12N20TU Datasheet (Total Pages: 11, Size: 1,059.24 KB)
PDFFQU12N20TU Datasheet Cover
FQU12N20TU Datasheet Page 2 FQU12N20TU Datasheet Page 3 FQU12N20TU Datasheet Page 4 FQU12N20TU Datasheet Page 5 FQU12N20TU Datasheet Page 6 FQU12N20TU Datasheet Page 7 FQU12N20TU Datasheet Page 8 FQU12N20TU Datasheet Page 9 FQU12N20TU Datasheet Page 10 FQU12N20TU Datasheet Page 11

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FQU12N20TU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds910pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 55W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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