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FQU13N06LTU

FQU13N06LTU

For Reference Only

Part Number FQU13N06LTU
PNEDA Part # FQU13N06LTU
Description MOSFET N-CH 60V 11A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 52,152
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQU13N06LTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQU13N06LTU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU13N06LTU, FQU13N06LTU Datasheet (Total Pages: 10, Size: 1,008.89 KB)
PDFFQD13N06LTM Datasheet Cover
FQD13N06LTM Datasheet Page 2 FQD13N06LTM Datasheet Page 3 FQD13N06LTM Datasheet Page 4 FQD13N06LTM Datasheet Page 5 FQD13N06LTM Datasheet Page 6 FQD13N06LTM Datasheet Page 7 FQD13N06LTM Datasheet Page 8 FQD13N06LTM Datasheet Page 9 FQD13N06LTM Datasheet Page 10

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FQU13N06LTU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs115mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.4nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 28W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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