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FQU1N80TU

FQU1N80TU

For Reference Only

Part Number FQU1N80TU
PNEDA Part # FQU1N80TU
Description MOSFET N-CH 800V 1A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,892
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQU1N80TU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQU1N80TU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU1N80TU, FQU1N80TU Datasheet (Total Pages: 11, Size: 1,451.36 KB)
PDFFQU1N80TU Datasheet Cover
FQU1N80TU Datasheet Page 2 FQU1N80TU Datasheet Page 3 FQU1N80TU Datasheet Page 4 FQU1N80TU Datasheet Page 5 FQU1N80TU Datasheet Page 6 FQU1N80TU Datasheet Page 7 FQU1N80TU Datasheet Page 8 FQU1N80TU Datasheet Page 9 FQU1N80TU Datasheet Page 10 FQU1N80TU Datasheet Page 11

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FQU1N80TU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs20Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.2nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds195pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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