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FQU2N50BTU-WS

FQU2N50BTU-WS

For Reference Only

Part Number FQU2N50BTU-WS
PNEDA Part # FQU2N50BTU-WS
Description MOSFET N-CH 500V 1.6A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,986
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQU2N50BTU-WS Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQU2N50BTU-WS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU2N50BTU-WS, FQU2N50BTU-WS Datasheet (Total Pages: 8, Size: 765.22 KB)
PDFFQU2N50BTU-WS Datasheet Cover
FQU2N50BTU-WS Datasheet Page 2 FQU2N50BTU-WS Datasheet Page 3 FQU2N50BTU-WS Datasheet Page 4 FQU2N50BTU-WS Datasheet Page 5 FQU2N50BTU-WS Datasheet Page 6 FQU2N50BTU-WS Datasheet Page 7 FQU2N50BTU-WS Datasheet Page 8

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FQU2N50BTU-WS Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.3Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds230pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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