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FQU4N20TU

FQU4N20TU

For Reference Only

Part Number FQU4N20TU
PNEDA Part # FQU4N20TU
Description MOSFET N-CH 200V 3A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,104
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 9 - May 14 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQU4N20TU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQU4N20TU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU4N20TU, FQU4N20TU Datasheet (Total Pages: 9, Size: 728.58 KB)
PDFFQD4N20TF Datasheet Cover
FQD4N20TF Datasheet Page 2 FQD4N20TF Datasheet Page 3 FQD4N20TF Datasheet Page 4 FQD4N20TF Datasheet Page 5 FQD4N20TF Datasheet Page 6 FQD4N20TF Datasheet Page 7 FQD4N20TF Datasheet Page 8 FQD4N20TF Datasheet Page 9

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FQU4N20TU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds220pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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